GlobalFoundries VP details FDX Fusion technology, sporting 7nm-class performance without the need for EUV tools — company targets 2030 for high-volume manufacturing, with planar transistors in tow
GlobalFoundries 详解 FDX Fusion:无需 EUV 达 7nm 级性能
要点导读
- FDX Fusion 无需 EUV 光刻
- 可达 7nm 级性能、8nm 级密度
- 采用平面 FD-SOI 晶体管
- 目标 2030 年大规模量产
原文摘要 · 中英对照
GlobalFoundries reveals new details about its FDX Fusion technology, which promises 7nm-class performance and 8nm-class logic density using planar FD-SOI transistors without EUV lithography, shares what is next for FDX Fusion node, and the FDX program in general.
GlobalFoundries 披露了其 FDX Fusion 技术的新细节,该技术承诺使用平面 FD-SOI 晶体管、无需 EUV 光刻即可实现 7nm 级性能和 8nm 级逻辑密度,并分享了 FDX Fusion 节点的后续规划以及 FDX 项目的整体情况。
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原文来源:Tom's Hardware(tomshardware.com)。本页摘要与要点整理自公开来源,版权归原作者所有,完整内容请阅读原文。